发明名称 Device and methodology for reducing effective dielectric constant in semiconductor devices
摘要 Method of manufacturing a structure which includes the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
申请公布号 US7892940(B2) 申请公布日期 2011.02.22
申请号 US20070851123 申请日期 2007.09.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 EDELSTEIN DANIEL C.;COLBURN MATTHEW E.;COONEY, III EDWARD C.;DALTON TIMOTHY J.;FITZSIMMONS JOHN A.;GAMBINO JEFFREY P.;HUANG ELBERT E.;LANE MICHAEL W.;MCGAHAY VINCENT J.;NICHOLSON LEE M.;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH;SANKARAN SUJATHA;SHAW THOMAS M.;SIMON ANDREW H.;STAMPER ANTHONY K.
分类号 H01L21/00;H01L21/033;H01L21/302;H01L21/311;H01L21/4763;H01L21/768;H01L23/48;H01L23/522;H01L23/532;H01L29/40 主分类号 H01L21/00
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