发明名称 |
Device and methodology for reducing effective dielectric constant in semiconductor devices |
摘要 |
Method of manufacturing a structure which includes the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
|
申请公布号 |
US7892940(B2) |
申请公布日期 |
2011.02.22 |
申请号 |
US20070851123 |
申请日期 |
2007.09.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDELSTEIN DANIEL C.;COLBURN MATTHEW E.;COONEY, III EDWARD C.;DALTON TIMOTHY J.;FITZSIMMONS JOHN A.;GAMBINO JEFFREY P.;HUANG ELBERT E.;LANE MICHAEL W.;MCGAHAY VINCENT J.;NICHOLSON LEE M.;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH;SANKARAN SUJATHA;SHAW THOMAS M.;SIMON ANDREW H.;STAMPER ANTHONY K. |
分类号 |
H01L21/00;H01L21/033;H01L21/302;H01L21/311;H01L21/4763;H01L21/768;H01L23/48;H01L23/522;H01L23/532;H01L29/40 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|