| 摘要 |
A neuron device includes: a semiconductor layer; source and drain regions formed in the semiconductor layer at a distance from each other; a protection film formed on an upper face of the semiconductor layer; a channel region formed in the semiconductor layer between the source region and the drain region; a pair of gate insulating films formed on two side faces of the channel region; a floating gate electrode including: a first portion covered on the gate insulating films and the protection film; a second portion connected to the first portion; and a third portion provided on the substrate so as to connect to the end portion of the second portion on the opposite side from the first portion; an interelectrode insulating film provided on the first to third portions; and a plurality of control gate electrodes provided on the third portion.
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