| 摘要 |
The subject invention pertains to a piezoelectric device structure for improved acoustic wave sensing and/or generation, and process for making same. The piezoelectric thin film field effect transducer can be a thin film transistor (TFT) with either a piezoelectric film gate or a composite gate having a dielectric film and a piezoelectric film. The TFT structure can be either a top gate device or a bottom gate device. In an embodiment, the piezoelectric device structure can be used to form an array of piezoelectric thin film field effect transducers. A TFT switch can drive each piezoelectric transducer in the array. The piezoelectric transducers can both generate and sense acoustic waves. In a sensing mode, a signal from an acoustic wave can be collected at a readout terminal of the piezoelectric transducer. In a generating mode, an excitation signal can be applied across the piezoelectric transducer while the switch is ‘on’.
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