| 摘要 |
There is provided a dielectric material containing no sulfur (S), and there is provided an information recording medium that affords high signal quality and excellent recording sensitivity and repeated rewrite characteristics, even though no interface layer is provided between a reflective layer and a dielectric layer. To this end, the present invention is an information recording medium that is equipped with at least a recording layer and undergoes phase change when the recording layer is irradiated with a laser beam or when current is applied, comprising an oxide-fluoride dielectric layer that includes indium (In), an element M1 (where M1 is at least one element selected from among Zr, Hf, Y, Ti, Nb, Ta, Cr, Ga, and Si), oxygen (O), an element M2 (where M2 is at least one element selected from among La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Yb, Mg, Ca, and Sr), and fluorine (F).
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