发明名称 PVD target with end of service life detection capability
摘要 A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.
申请公布号 US7891536(B2) 申请公布日期 2011.02.22
申请号 US20060427618 申请日期 2006.06.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HSIAO YI-LI;YU CHEN-HUA;WANG JEAN;SHEU LAWRANCE
分类号 B21D39/00 主分类号 B21D39/00
代理机构 代理人
主权项
地址