发明名称 |
HIGHLY DENSE PZT-PMNN PIEZOELECTIC THICK FILM AND PREPARATION METHOD THEREOF |
摘要 |
PURPOSE: A high-density PZT-PMnN piezoelectic thick film and a manufacturing method thereof are provided to manufacture a high-density PZT-PMnN piezoelectic thick film without cracks and pores. CONSTITUTION: A piezoelectric element consisting of solid solution of Pb(Zr,Ti)O3 and Pb(Mn1/3Nb2/3)O3 having the perovskite phase is deposited in vacuum on one side of the surface of a substrate through a room temperature/vacuum powder spraying process, thereby forming a piezoelectric thick film. The piezoelectric thick film has thickness more than 5 micron. The piezoelectric thick film has 0.1 Pb(Zr,Ti)O3-Pb(Mn1/3Nb2/3)O3 as a fundamental composition.
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申请公布号 |
KR20110017592(A) |
申请公布日期 |
2011.02.22 |
申请号 |
KR20090075132 |
申请日期 |
2009.08.14 |
申请人 |
KOREA INSTITUTE OF MACHINERY & MATERIALS |
发明人 |
RYU, JUNG HO;PARK, DONG SOO |
分类号 |
C23C24/00 |
主分类号 |
C23C24/00 |
代理机构 |
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