发明名称 HIGHLY DENSE PZT-PMNN PIEZOELECTIC THICK FILM AND PREPARATION METHOD THEREOF
摘要 PURPOSE: A high-density PZT-PMnN piezoelectic thick film and a manufacturing method thereof are provided to manufacture a high-density PZT-PMnN piezoelectic thick film without cracks and pores. CONSTITUTION: A piezoelectric element consisting of solid solution of Pb(Zr,Ti)O3 and Pb(Mn1/3Nb2/3)O3 having the perovskite phase is deposited in vacuum on one side of the surface of a substrate through a room temperature/vacuum powder spraying process, thereby forming a piezoelectric thick film. The piezoelectric thick film has thickness more than 5 micron. The piezoelectric thick film has 0.1 Pb(Zr,Ti)O3-Pb(Mn1/3Nb2/3)O3 as a fundamental composition.
申请公布号 KR20110017592(A) 申请公布日期 2011.02.22
申请号 KR20090075132 申请日期 2009.08.14
申请人 KOREA INSTITUTE OF MACHINERY & MATERIALS 发明人 RYU, JUNG HO;PARK, DONG SOO
分类号 C23C24/00 主分类号 C23C24/00
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