| 摘要 |
A protection circuit for an NMOS device is provided. The protection circuit includes a cascoding NMOS transistor and an adjusting circuit. The cascoding NMOS transistor is cascoded between the NMOS device and an external voltage source. The adjusting circuit is coupled to the external voltage source, a gate of the cascoding NMOS transistor, and an internal voltage source. The adjusting circuit adjusts the voltage at the gate of the cascoding NMOS transistor according to the voltages of the external voltage source and the internal voltage source so as to protect the NMOS device from a voltage stress caused by the external voltage source.
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