| 摘要 |
A nonvolatile semiconductor storage device includes: a memory cell array in which electrically rewritable nonvolatile memory cells are arranged; and a register that holds good/bad information on a specific area that requires high reliability in a user accessible area of the memory cell array. An address conversion circuit internally accesses, when the specific area is bad and is accessed, a backup area in the user accessible area based on the good/bad information in the register. When the specific area is bad and the backup area is accessed, on the other hand, the address conversion circuit internally accesses the specific area based on the good/bad information in the register.
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