发明名称 Optically initiated silicon carbide high voltage switch
摘要 An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
申请公布号 US7893541(B2) 申请公布日期 2011.02.22
申请号 US20060586468 申请日期 2006.10.24
申请人 LAWRENCE LIVERMORE NATIONAL SECURITY, LLC 发明人 CAPORASO GEORGE J.;SAMPAYAN STEPHEN E.;SULLIVAN JAMES S.;SANDERS DAVID M.
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
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