发明名称 |
Optically initiated silicon carbide high voltage switch |
摘要 |
An improved photoconductive switch having a SiC or other wide band gap substrate material, such as GaAs and field-grading liners composed of preferably SiN formed on the substrate adjacent the electrode perimeters or adjacent the substrate perimeters for grading the electric fields.
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申请公布号 |
US7893541(B2) |
申请公布日期 |
2011.02.22 |
申请号 |
US20060586468 |
申请日期 |
2006.10.24 |
申请人 |
LAWRENCE LIVERMORE NATIONAL SECURITY, LLC |
发明人 |
CAPORASO GEORGE J.;SAMPAYAN STEPHEN E.;SULLIVAN JAMES S.;SANDERS DAVID M. |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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