发明名称 |
Threshold voltage improvement employing fluorine implantation and adjustment oxide layer |
摘要 |
An epitaxial semiconductor layer may be formed in a first area reserved for p-type field effect transistors. An ion implantation mask layer is formed and patterned to provide an opening in the first area, while blocking at least a second area reserved for n-type field effect transistors. Fluorine is implanted into the opening to form an epitaxial fluorine-doped semiconductor layer and an underlying fluorine-doped semiconductor layer in the first area. A composite gate stack including a high-k gate dielectric layer and an adjustment oxide layer is formed in the first and second area. P-type and n-type field effect transistors (FET's) are formed in the first and second areas, respectively. The epitaxial fluorine-doped semiconductor layer and the underlying fluorine-doped semiconductor layer compensate for the reduction of the decrease in the threshold voltage in the p-FET by the adjustment oxide portion directly above.
|
申请公布号 |
US7893502(B2) |
申请公布日期 |
2011.02.22 |
申请号 |
US20090465908 |
申请日期 |
2009.05.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.;INFINEON TECHNOLOGIES AG |
发明人 |
LI WEIPENG;PARK DAE-GYU;SHERONY MELANIE J.;HAN JIN-PING;LEE YONG MENG |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|