发明名称 |
Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films |
摘要 |
Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.
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申请公布号 |
US7892413(B2) |
申请公布日期 |
2011.02.22 |
申请号 |
US20090371546 |
申请日期 |
2009.02.13 |
申请人 |
SOLOPOWER, INC. |
发明人 |
AKSU SERDAR;WANG JIAXIONG;BASOL BULENT M. |
分类号 |
C25D3/56;C25D3/58;C25D3/62 |
主分类号 |
C25D3/56 |
代理机构 |
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主权项 |
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