| 摘要 |
An integrated pair of HBT and FET transistors shares a common compound semiconductor III-V epitaxial layer. The integrated pair of transistors includes a semi-insulating substrate of a compound semiconductor III-V material, a first epitaxial structure disposed on top of the substrate, a second epitaxial structure on top of the first epitaxial structure, and a third epitaxial structure disposed on top of the second epitaxial structure. The first epitaxial structure forms a portion of the HBT transistor. A concentration profile of a first contaminant, which contributes electrical charge, decreases substantially smoothly across an interface between the semi-insulating substrate and the first epitaxial structure. In some cases, the interface is free of a second contaminant that was present, during formation of the epitaxial structures, in a chamber in which the epitaxial structures were formed.
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