| 摘要 |
A method of producing a semiconductor structure having a buried insulating layer having a thickness between 2 and 25 nm, by: forming at least one insulating layer on a surface of a first or second substrate, or both, wherein the surfaces are free from an insulator or presenting a native oxide layer resulting from exposure of the substrates to ambient conditions; assembling the first and second substrates; and thinning down the first substrate, in order to obtain the semiconductor structure. In this method, the insulating layer forming stage is a plasma activation based on an oxidizing or nitriding gas.
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