发明名称 |
Method to improve transistor tox using SI recessing with no additional masking steps |
摘要 |
A method of forming a transistor device is provided wherein a gate structure is formed over a semiconductor body of a first conductivity type. The gate structure is formed comprising a protective cap thereover and defining source/drain regions laterally adjacent thereto. A first implant is performed of a second conductivity type into both the gate structure and the source/drain regions. The semiconductor body is etched to form recesses substantially aligned to the gate structure wherein the first implant is removed from the source/drain regions. Source/drain regions are implanted or grown by a selective epitaxial growth.
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申请公布号 |
US7892930(B2) |
申请公布日期 |
2011.02.22 |
申请号 |
US20070868787 |
申请日期 |
2007.10.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
OBRADOVIC BORNA;EKBOTE SHASHANK S. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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