| 摘要 |
<p>PURPOSE: A fine pattern forming method is provided to prevent the peeling phenomenon between photoresist layers by increasing the adhesive force and uniformity between photoresist layers by forming the intermediate layer. CONSTITUTION: A first photoresist film(202) is formed on a semiconductor substrate(200). An intermediate layer(204) is formed on the top of the first photoresist film. A double photoresist film is formed in the semiconductor of the substrate by forming a second photoresist film(206) on the top of the intermediate layer. The double photoresist film is successively patterned.</p> |
