| 发明名称 |
PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC THIN FILM DEVICE, AND METHOD OF MANUFACTURING THE PIEZOELECTRIC THIN FILM ELEMENT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. <P>SOLUTION: A piezoelectric thin film element comprises, on a silicon substrate: a lower electrode; a piezoelectric thin film having an alkali niobium oxide series perovskite structure expressed by a general formula (K<SB>1-x</SB>Na<SB>x</SB>)NbO<SB>3</SB>(0<x<1); and an upper electrode. Wherein, an intensity of a higher angle side skirt field is stronger than an intensity of a lower angle side skirt field of a diffraction peak at a KNN (002) diffraction peak in an X-ray diffraction 2θ/θ pattern of the piezoelectric thin film element. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011035370(A) |
申请公布日期 |
2011.02.17 |
| 申请号 |
JP20100028666 |
申请日期 |
2010.02.12 |
| 申请人 |
HITACHI CABLE LTD |
发明人 |
SHIBATA KENJI;SATO HIDEKI;SUENAGA KAZUFUMI;NOMOTO AKIRA |
| 分类号 |
H01L41/08;C23C14/08;C23C14/34;H01L41/09;H01L41/18;H01L41/22;H01L41/316;H01L41/39;H01L41/43 |
主分类号 |
H01L41/08 |
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