| 摘要 |
<P>PROBLEM TO BE SOLVED: To ensure predetermined heat radiation (heat discharge) performance in a power device by stacking a bare chip comprising the power device and another bare chip. <P>SOLUTION: Multiple first bare chips (10) having one upper arm-side power device (130) formed with a vertical structure are provided. One or more second bare chips (11) with at least one element formed therein are provided. The second bare chips (11) are stacked over the first bare chips (10). The first bare chips (10) are formed using, as a chief material, a semiconductor whose value of breakdown electric field (Eb)×coefficient of thermal conductivity (λ) is larger than that of silicon. <P>COPYRIGHT: (C)2011,JPO&INPIT |
