发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a re-wiring layer from peeling due to peeling of a sealing insulating layer in a land even if the land is microfabricated. <P>SOLUTION: The semiconductor device has a semiconductor substrate 10 having a semiconductor device and an electrode on one main surface 10a, an interlayer dielectric 11 formed on the one main surface 10a, a re-wiring layer 12 formed on the interlayer dielectric 11, and a sealing insulating layer 17 for sealing the upper surface of the re-wiring layer 12. The re-wiring layer 12 includes a land 14 formed on an end of a wiring layer 13, and an outline 15 formed around the land 14 so as to be away from the land 14. The sealing insulating layer 17 has an opening 17a for exposing at least part of the land 14, and the sealing insulating layer 17 and an interlayer dielectric 11 are bonded in a gap 16 between the land 14 and the outline 15. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011034988(A) 申请公布日期 2011.02.17
申请号 JP20090176657 申请日期 2009.07.29
申请人 FUJIKURA LTD 发明人 TORII JUNICHI
分类号 H01L21/60;H01L21/3205;H01L21/768;H01L23/12;H01L23/52;H01L23/522 主分类号 H01L21/60
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