| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment method for a plasma treatment apparatus and the plasma treatment apparatus, capable of preventing damage of a rear surface of a semiconductor substrate by preventing plasma from infiltrating the rear surface of the semiconductor substrate. <P>SOLUTION: In the plasma treatment apparatus, the semiconductor substrate W is housed in a substrate holding hole 9 of a susceptor 7 so that the outer circumferential edge of the rear surface Wa of the semiconductor substrate W abuts against the inner circumferential surface 8 of the substrate-holding hole 9, and the substrate holding hole 9 of the susceptor 7 is closed by the semiconductor substrate W. In this way, plasma is prevented from infiltrating the rear surface Wa of the semiconductor substrate W through between the outer circumferential edge of the rear surface Wa of the semiconductor substrate W and the inner circumferential surface 8 of the substrate-holding hole 9. Also, exhaustion holes 50 are provided at the four corners of a bottom plate 3 of a chamber 2 so as to discharge a gas in the chamber 2 through the four corners, and the oxygen plasma exposed on the surface Wb of the semiconductor substrate W guided from the diffusion plate 43 and disposed downward is guided toward the exhaust holes 50, provided at the four corners of the bottom plate 3 of the chamber 2. <P>COPYRIGHT: (C)2011,JPO&INPIT |
