发明名称 |
POWER AMPLIFIER HAVING DEPLETION MODE HIGH ELECTRON MOBILITY TRANSISTOR |
摘要 |
Provided is a power amplifier including: a depletion mode high electron mobility transistor (D-mode HEMT) configured to amplify a signal inputted to a gate terminal and output the amplified signal through a drain terminal; an input matching circuit configured to serially ground the gate terminal; and a DC bias circuit connected between the drain terminal and a ground. Through the foregoing configuration, the HEMT may be biased only by a single DC bias circuit without any biasing means to provide a negative voltage. Also, superior matching characteristic may be provided in various operation frequency bands through a shunt inductor and a choke inductor.
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申请公布号 |
US2011037521(A1) |
申请公布日期 |
2011.02.17 |
申请号 |
US20100855055 |
申请日期 |
2010.08.12 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KANG DONG MIN;JI HONG GU;AHN HOKYUN;LIM JONG-WON;CHANG WOOJIN;LEE SANG-HEUNG;KIM DONG-YOUNG;KIM HAE CHEON |
分类号 |
H03F3/04 |
主分类号 |
H03F3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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