| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for regenerating a high-purity silicon single crystal with a few processes. SOLUTION: The method for regenerating recovered polycrystalline silicon includes: a process of storing recovered powdery or flake-like polycrystalline silicon 34 into a quartz cylinder 2 of which the upper surface and lower surface are opened and respectively are covered with silicon plates 22, 23; a process of putting the quartz cylinder in which the powdery or flake-like polycrystalline silicon is stored into a CZ drawing-up furnace 1, reducing the pressure to a prescribed pressure and introducing an inactive gas; a process of elevating the temperature in the CZ drawing-up furnace while positioning the quartz cylinder in which the powdery or flake-like polycrystalline silicon is stored onto a crucible 12 of the CZ drawing-up furnace 1, dissolving the powdery or flake-like polycrystalline silicon and the silicon plates and storing the dissolved silicon into the crucible; a process of taking-out the quartz cylinder from the CZ drawing-up furnace; and a process of growing the dissolved silicon in the crucible according to a CZ method to produce a single crystal silicon. COPYRIGHT: (C)2011,JPO&INPIT |
