| 摘要 |
<p>PURPOSE: A semiconductor device manufacturing method is provided to prevent the deterioration of the electrode of the gate insulating layer and the layer quality of the gate insulation layer by forming the MLD-SiO2 on a substrate, the gate electrode, and the gate insulating layer. CONSTITUTION: A High-k film(2) is formed on a substrate(1). A metal layer(3) being different from the High-k film is formed on the High-k film. A reflection barrier layer(4) is formed on the metal layer. A sacrificing layer(5) is formed on the reflection barrier layer. A sacrificial layer pattern is formed by processing the sacrificial layer with the pattern having desired interval by the etching.</p> |
