| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bonding wire for semiconductor, which ensures good wedge bonding even of palladium-plated lead frames and has excellent oxidation resistance, and in which copper or a copper alloy is used as a core wire. <P>SOLUTION: The bonding wire for semiconductor is characterized by comprising a core wire that comprises: copper or a copper alloy; a coating layer that is arranged on the surface of the core wire, has a thickness of 10 to 200 nm and contains palladium; and an alloy layer that is arranged on the surface of the coating layer, has a thickness of 3 to 30 nm and contains silver and palladium, wherein the silver is contained in the alloy layer of the silver and palladium at a concentration of 10 to 70 vol% inclusive. <P>COPYRIGHT: (C)2011,JPO&INPIT |
