| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition that is improved in line edge roughness by normal exposure and liquid immersion exposure and exhibits excellent conformability to water in liquid immersion exposure, and a pattern forming method using the same. <P>SOLUTION: The positive resist composition includes: (A) a resin that has an acid decomposable repeating unit represented by formula (I) and increases its dissolution rate in an alkali developer by action of an acid; (B) a compound that generates an acid in irradiation with actinic light or radiation; (C) a resin that has: at least one of a fluorine atom and a silicon atom; and a group selected from the group consisting of groups (x) to (z); and (D) a solvent: (x) an alkali soluble group, (y) a group which decomposes by action of an alkali developer and increases a solubility in an alkali developer, and (z) a group which decomposes by action of an acid, wherein, Xa1 represents a hydrogen atom, alkyl, cyano or a halogen atom, Ry1 to Ry3 each independently represents alkyl or cycloalkyl, and at least two of Ry1 to Ry3 may be coupled to form a ring structure, and Z represents a divalent linking group. <P>COPYRIGHT: (C)2011,JPO&INPIT |
