LIGHT EMITTING DIODE USING SILICON NITRIDES AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A light emitting diode using silicon nitrides and a manufacturing method thereof are provided to offer more stable process environment by fixing the process condition with the flow ratio of reaction gas and deposition pressure. CONSTITUTION: The silicon nitride base body(20) is grown up on a substrate(10) by using the silicon source gas and the nitrogen source gas of the fixed flow ratio. The size of the silicon nano structure formed within the silicon nitride base body is controlled by varying the plasma power. The silicon source gas is the silane gas.