| 摘要 |
1505165 Oxide material for use in semiconductor devices RCA CORPORATION 20 May 1975 [13 June 1974] 21488/75 Heading H1K A novel material comprises the oxidized product of a composition consisting of Si and a refractory metal (e.g. Pt, Mo, W, Rh or Re) which reacts with Si to form a silicide. The Si/refractory metal composition comprises a layer sputtered on to a. substrate, e.g. of Si, glass, SiO2 or Si3N4 and, being conductive (to a degree determined by the substrate temperature during sputtering and by any subsequent annealing step), may constitute an electrode or a conductive track in an integrated circuit. The oxidized product thereof is insulating and may serve insulation, dielectric or masking functions. Suitable etchants therefor are disclosed. The oxidation step is preferably effected at 400-600‹ C., the oxygen content of the oxidizing atmosphere being lower at the higher temperatures in order to obtain a satisfactory oxidized product. All or part only of the thickness of the sputtered Si/refractory metal layer may be subjected to oxidation. |
