发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the plug resistance by forming the landing plug. CONSTITUTION: An element isolation film(14) defining a plurality of active areas(12) is formed on a semiconductor substrate. A plurality of word lines(20) is formed on the semiconductor substrate. A storage electrode contact hole exposing the storage node contact domain of the adjacent two active areas formed.
申请公布号 KR20110016218(A) 申请公布日期 2011.02.17
申请号 KR20090073818 申请日期 2009.08.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, DO HYUNG;CHO, YOUNG MAN
分类号 H01L21/8242;H01L21/28 主分类号 H01L21/8242
代理机构 代理人
主权项
地址