发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the plug resistance by forming the landing plug. CONSTITUTION: An element isolation film(14) defining a plurality of active areas(12) is formed on a semiconductor substrate. A plurality of word lines(20) is formed on the semiconductor substrate. A storage electrode contact hole exposing the storage node contact domain of the adjacent two active areas formed.
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申请公布号 |
KR20110016218(A) |
申请公布日期 |
2011.02.17 |
申请号 |
KR20090073818 |
申请日期 |
2009.08.11 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, DO HYUNG;CHO, YOUNG MAN |
分类号 |
H01L21/8242;H01L21/28 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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