发明名称 SEMICONDUCTOR DEVICE AND POWER SUPPLY CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses carrier injection into a substrate, and to provide a power supply circuit. SOLUTION: The semiconductor device has: a fourth semiconductor region 26 of a second conductivity type, provided on a surface of a semiconductor layer 22 of a first conductivity type while spaced apart from a first semiconductor region 23 of the second conductivity type, a second semiconductor region 24 of the second conductivity type, a third semiconductor region 25 of the first conductivity type; a fifth semiconductor region 27 of the first conductivity type, provided on the surface of the semiconductor layer 22 while spaced apart from the first semiconductor region 23, second semiconductor region 24, and third semiconductor region 25; and a floating electrode 35 connecting the fourth semiconductor region 26 and the fifth semiconductor region 27 to each other. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011035292(A) 申请公布日期 2011.02.17
申请号 JP20090182286 申请日期 2009.08.05
申请人 TOSHIBA CORP 发明人 NAKAMURA KAZUTOSHI
分类号 H01L27/06;H01L21/822;H01L21/8234;H01L27/04;H02M3/155 主分类号 H01L27/06
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