| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor memory element which forms a discrete floating gate composed of metal nanocrystal by an advection accumulation method. SOLUTION: The manufacturing method includes processes of: filling a space between a silicon substrate 1 and a second substrate 21 arranged so as to face a tunnel insulating film formed on the silicon substrate 1, with a particle dispersion liquid 22 in which metal nano particles are distributed; and arranging the metal nano particle on the tunnel insulating film by evaporating a solvent of a particle dispersion liquid 22 in a meniscus region 23 of the particle dispersion liquid 22 formed in a region exposed from the second substrate 21 in the surface of the tunnel insulating film, by relatively moving the second substrate 21 with regard to the silicon substrate 1 in a direction along the surface of the tunnel insulating film. COPYRIGHT: (C)2011,JPO&INPIT
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