发明名称 MULTILAYER WIRING, SEMICONDUCTOR DEVICE, SUBSTRATE FOR DISPLAY AND DISPLAY DEVICE
摘要 The present invention provides a multilayer wiring capable of reducing the area of the wiring layer while preventing the property deterioration due to the parasitic capacitance, a semiconductor device, a substrate for display device, and a display device. The multilayer wiring of the present invention includes: a first conductor; a second conductor; and a third conductor. The first conductor is positioned in a (n+1)th conductive layer. The second conductor is positioned in a (n+2)th conductive layer, is electrically connected to a conductor in a layer below the (n+1)th conductive layer through at least a first connection hole in a (n+1)th insulating layer directly below the (n+2)th conductive layer, and is positioned so as not to overlap with the first conductor in a plan view of the main face of the substrate. The third conductor is positioned in a (n+3)th conductive layer, is electrically connected to a second conductor through a second connection hole in a (n+2)th insulating layer directly below the (n+3)th conductive layer, and is positioned on the second connection hole toward the first conductor. The second connection hole overlaps with the first connection hole in a plan view of the main face of the substrate.
申请公布号 US2011037072(A1) 申请公布日期 2011.02.17
申请号 US20080988588 申请日期 2008.12.12
申请人 MORIWAKI HIROYUKI 发明人 MORIWAKI HIROYUKI
分类号 H01L33/08;H01L23/522 主分类号 H01L33/08
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