摘要 |
A light emitting diode includes a silicon carbide substrate (120) having first (120A) and second (120B) opposing faces, a diode region (110) on the first face, anode (112) and cathode (114) contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector (132, 134) on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer (132) having an index of refraction that is lower than the index of the silicon carbide substrate, and a reflective layer (232) on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer (432) may be provided between the hybrid reflector and the die attach layer. |
申请人 |
CREE, INC.;BERGMANN, MICHAEL, JOHN;HABERERN, KEVIN, WARD;WILLIAMS, BRADLEY, E.;PARKER, WINSTON, T.;PUN, ARTHUR, FONG-YUEN;SUH, DOOWON;DONOFRIO, MATTHEW |
发明人 |
BERGMANN, MICHAEL, JOHN;HABERERN, KEVIN, WARD;WILLIAMS, BRADLEY, E.;PARKER, WINSTON, T.;PUN, ARTHUR, FONG-YUEN;SUH, DOOWON;DONOFRIO, MATTHEW |