| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element that can reduce a current leak path and also reduce ON resistance of a drift layer. SOLUTION: The nitride semiconductor element 11 has a channel layer 15 and a carrier supply layer 17 grown on an opening 31 of a semiconductor laminate 13. The semiconductor laminate 13 includes an n-type drift layer 23, a p-type current block layer 25, and an n-type contact layer 17, and those semiconductor layers 23, 25, and 27 are provided in order on a principal surface 29a of a support base 29. The semiconductor laminate 13 has an X-ray diffraction half-value width of≤100 seconds (0002) plane direction, an X-ray diffraction half-value width of≤250 seconds in a (10-12) plane direction. A gate electrode 19 is provided on the carrier supply layer 17. The gate electrode 19 is provided to modulate a concentration of a two-dimensional electron gas 35 in the channel layer 15 provided on a side surface 25a of a current block layer 25. COPYRIGHT: (C)2011,JPO&INPIT |
