| 发明名称 |
SELEKTIV DIFFUSION AV ALUMINIUM |
| 摘要 |
A silicon substrate is coated with a mask comprised of the combination of a silicon dioxide layer and a layer of undoped polycrystalline silicon. Aluminum is then diffused through windows formed in the mask. The mask has proven effective for relatively deep aluminum diffusion. |
| 申请公布号 |
SE7713183(A) |
申请公布日期 |
1978.06.10 |
| 申请号 |
SE19770013183 |
申请日期 |
1977.11.22 |
| 申请人 |
* RCA CORPORATION |
发明人 |
W * ROSNOWSKI;S * PONCZAK |
| 分类号 |
H01L21/22;H01L21/033;H01L21/223;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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