| 摘要 |
Disclosed is a thin-film photoelectric conversion element of which the thickness can be reduced to several tens of nanometers or less. Also disclosed is a method for manufacturing the thin-film photoelectric conversion element. The thin-film photoelectric conversion element comprises a metal silicide layer that is formed on a surface of a silicon substrate as a result of the diffusion of a first metal and silicon, an electroconductive thin-film layer that is formed on a second metal thin-film layer-stacked site on the surface of the silicon substrate, and a silicon diffused part that is arranged around the surface of the silicon substrate and between the metal silicide layer and the electroconductive thin-film layer and is formed as a result of the diffusion of nano-particles of silicon. When light is applied to the metal silicide layer or the electroconductive thin-film layer that forms a Schottky interface with the silicon substrate in the stacking direction, a photoinduced current is generated between the metal silicide layer and the electroconductive thin-film layer on the surface of the silicon substrate.
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