| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial wafer capable of reducing occurrence of cratering in a wire bonding process in assembling a light emitting diode, and thereby improving a yield, and a light emitting diode. <P>SOLUTION: In this epitaxial wafer including at least a substrate, an n-type layer formed on the substrate by epitaxial growth, and a p-type layer on the n-type layer, the n-type layer and the p-type layer are each formed of GaAsP or GaP; and the p-type layer includes at least a first p-type layer and a second p-type layer located above the first p-type layer and high in carrier concentration, and further includes a first carrier concentration increase layer located between the n-type layer and the first p-type layer and having gradually-increasing p-type carrier concentration, and a second p-type carrier concentration increase layer located between the first p-type layer and the second p-type layer and having gradually-increasing p-type carrier concentration. <P>COPYRIGHT: (C)2011,JPO&INPIT |
