发明名称 |
PLASMA TREATMENT CHAMBER HAVING SWITCHABLE BIAS FREQUENCY, AND SWITCHABLE MATCHING NETWORK |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment chamber having a switchable bias frequency superposed on a plasma source frequency and also applied to a cathode. <P>SOLUTION: A power supplier capable of generating multiple RF bias frequencies is coupled to a single matching network via a switch. The matching network couples one of the bias frequencies to the cathode. Another matching network applies a source RF power to the cathode. One parallel connection of a variable shunt capacitor and a fixed capacitor is arranged between a ground and the switch, and another connection of the variable shunt capacitor and the fixed capacitor is arranged between the ground and the matching network of the source RF. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011034971(A) |
申请公布日期 |
2011.02.17 |
申请号 |
JP20100174470 |
申请日期 |
2010.08.03 |
申请人 |
ADVANCED MICRO-FABRICATION EQUIPMENT INC (ASIA) |
发明人 |
CHEN JINYUAN;YIN ZHIYAO |
分类号 |
H05H1/46;H01L21/3065;H03H7/38 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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