发明名称 NON VOLATILE MEMORY DEVICE AND OPERATING METHOD FO THE SAME
摘要 PURPOSE: A nonvolatile memory device and an operation method thereof are provided to execute a verify operation without failing a sensing operation by controlling a sensing bias voltage level according to temperature. CONSTITUTION: A temperature sensing part(610) generates a temperature sensing signal by sensing temperature. A microcontroller part(620) generates a sensing bias control signal in response to the temperature sensing signal. A voltage generating part(630) generates a sensing bias voltage in response to the sensing bias control signal. A connection part(120) electrically interlinks a bit line and a page buffer part in response to the sensing bias voltage.
申请公布号 KR20110016229(A) 申请公布日期 2011.02.17
申请号 KR20090073833 申请日期 2009.08.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HUH, HWANG;PARK, SEONG JE
分类号 G11C16/34;G11C16/30 主分类号 G11C16/34
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