发明名称 |
NON VOLATILE MEMORY DEVICE AND OPERATING METHOD FO THE SAME |
摘要 |
PURPOSE: A nonvolatile memory device and an operation method thereof are provided to execute a verify operation without failing a sensing operation by controlling a sensing bias voltage level according to temperature. CONSTITUTION: A temperature sensing part(610) generates a temperature sensing signal by sensing temperature. A microcontroller part(620) generates a sensing bias control signal in response to the temperature sensing signal. A voltage generating part(630) generates a sensing bias voltage in response to the sensing bias control signal. A connection part(120) electrically interlinks a bit line and a page buffer part in response to the sensing bias voltage.
|
申请公布号 |
KR20110016229(A) |
申请公布日期 |
2011.02.17 |
申请号 |
KR20090073833 |
申请日期 |
2009.08.11 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HUH, HWANG;PARK, SEONG JE |
分类号 |
G11C16/34;G11C16/30 |
主分类号 |
G11C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|