HETEROJUNCTION BIPOLAR TRANSISTORS AND METHODS OF MANUFACTURE

摘要

PURPOSE: A hetrojunction bipolar transistor and a manufacturing method thereof are provided to minimize the TDDB(Time-Dependent Dielectric Breakdown) by minimizing the space requirement while maximizing the current flow from the emitter and collector areas. CONSTITUTION: A collector(14), a SiGe base(16), and an emitter(18) are formed on a substrate(12). A wiring structure(24a) is formed within an dielectric(22) layer. A contact structure(24b) is electrically connected to the SiGe base. A contact structure(24c) is electrically connected to the emitter. A first wiring level(28) is formed by the dual damascene processing.