METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device capacitor manufacturing method is provided to prevent the bridge between adjacent storage nodes by compensating the bowing phenomenon by depositing the compensation insulation layer made of low temperature oxidation layer. CONSTITUTION: An etch stopping layer(24) and a mold dielectric film(25) are successively formed on the top of a semiconductor substrate(21). An open area(27) is formed by etching the mold insulation layer with the photosensitive pattern as the etching barrier. A compensation insulating layer(28B) for correcting the bowing profile is formed on the sidewall of the open area.