| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pattern drawing method for accurately correcting the dimension difference of pattern roughness and fineness by development loading, by adjusting an irradiation energy amount using a relational expression of a pattern area density and a dimension variation amount or a reference table in addition to a circuit pattern density distribution inside a photomask surface. <P>SOLUTION: In the pattern drawing method, the irradiation energy correction amount map of each development loading effect small section is prepared from a calculated dimension variation amount map in each development loading effect small section, and from the relational expression of the dimension variation amount and the irradiation energy correction amount, or the reference table. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
