| 摘要 |
An LED having a radiation-emitting active layer (7), an n-type contact (10), a p-type contact (9) and a current spreading layer (4) is specified. The current spreading layer (4) is arranged between the active layer (7) and the n-type contact (10). Furthermore, the current spreading layer (4) has a multiply repeating layer sequence having at least one n-doped layer (44), an undoped layer (42) and a layer composed of AlxGa1-xN (43), where 0≰x≰1. The layer composed of AlxGa1-xN (43) has a concentration gradient of the Al content. |
