| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical semiconductor device that has high latchup resistance and low resistance. SOLUTION: A back source-type trench VDMOS including a drain electrode 9 on a top surface of a first conductivity-type semiconductor substrate and also including a source electrode 5 on a back surface of the semiconductor substrate. The back source-type trench VDMOS further includes: a second conductivity-type drain region 8 coming into contact with the drain electrode 9; a second conductivity-type drift layer 6 in contact with the drain region 8 and sandwiched between adjacent gate electrode trenches; a second conductivity-type source region 4 selectively provided at a bottom part of the trench; and a first conductivity-type base region 2b sandwiched between source regions 4 so that the adjacent source regions 4 are spaced apart from each other, wherein the source regions 4 and base region 2b are both in contact with the source electrode 5. COPYRIGHT: (C)2011,JPO&INPIT
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