发明名称 |
CHEMICAL VAPOR GROWTH DEVICE AND CHEMICAL VAPOR GROWTH METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor growth device which forms carbon nanotubes at high speed on a large area substrate. SOLUTION: In the chemical vapor growth device 101, a nozzle 102 supplies a carbon source gas; a head 103 has a skirt 123 covering part of a substrate 106 with a catalyst disposed on a surface thereof and supplies the carbon source gas supplied from the nozzle 102 to an opposed region of the substrate 106; a moving part 104 moves the head 103 relatively to the substrate 106 in a predetermined direction at a predetermined speed; and a heating part 105 heats an electrically conductive member which faces the head 103 and on which the catalyst is disposed in the surface of the substrate 106 while the head 103 is moved to the substrate 106. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011032120(A) |
申请公布日期 |
2011.02.17 |
申请号 |
JP20090178815 |
申请日期 |
2009.07.31 |
申请人 |
UNIV OF TOKYO;DAINIPPON SCREEN MFG CO LTD |
发明人 |
NODA MASARU;FURUICHI TAKATSUGU |
分类号 |
C01B31/02;C23C16/26;C23C16/44;C23C16/455;C23C16/511;C23C16/54;H01L21/205;H01L21/285 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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