| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a highly reliable semiconductor element which is excellent in continuous operation property and electrical characteristics at a high temperature by preventing lowering of bonding strength between an SiC substrate and a metallic silicide layer and between a metallic silicide layer and a bonding metal layer due to interdiffusion in high temperature operation. SOLUTION: The manufacturing method of a semiconductor element includes a process for forming a first metallic layer comprising at least one metal selected from a group including nickel and titanium on a silicon carbide substrate, a process for forming a second metallic layer comprising iron on a surface of the first metallic layer, a process for performing heat treatment for the silicon carbide substrate wherein the first and second metallic layers are formed, and a process for removing the second metallic layer which is subjected to heat treatment. COPYRIGHT: (C)2011,JPO&INPIT |
