METHOD AND STRUCTURE FOR SELF ALIGNED CONTACT FOR INTEGRATED CIRCUITS

摘要

A high voltage integrated circuit device includes a semiconductor substrate having a surface region with a contact region, which is coupled to a source/drain region. The device has a plasma enhanced oxide overlying the surface region, a stop layer overlying the plasma enhanced oxide, and a contact opening through a portion of the stop layer and through a portion of the plasma enhanced oxide layer. The contact opening exposes a portion of the contact region without damaging it. The device has a silicide layer overlying the contact region to form a silicided contact region and an interlayer dielectric overlying the silicided contact region to fill the contact opening and provide a thickness of material overlying the stop layer. An opening in the interlayer dielectric layer is formed through a portion of the thickness to expose a portion of the silicided contact region and expose a portion of the stop layer.