发明名称 |
ACCEPTOR MODULATION DOPING OF NANOCRYSTALS AND QUANTUM STRUCTURES |
摘要 |
<p>A semiconductor device comprises nanocrystalline material bounded by a dielectric barrier layer material. Dopants are located in the dielectric material adjacent the nanocrystalline material, the dopants having a lowest unoccupied molecular orbital (LUMO) greater than or equal to 0.5 electronvolts below the highest occupied molecular orbital (HOMO) of the semiconductor material. When the dopant is activated the nanocrystalline material exchanges an electron with a dopant atom to create a hole as a majority carrier in the nanocrystalline material.</p> |
申请公布号 |
WO2011017774(A1) |
申请公布日期 |
2011.02.17 |
申请号 |
WO2010AU01043 |
申请日期 |
2010.08.13 |
申请人 |
NEWSOUTH INNOVATIONS PTY LIMITED;KOENIG, DIRK |
发明人 |
KOENIG, DIRK |
分类号 |
H01L31/0384;H01L21/22;H01L29/772 |
主分类号 |
H01L31/0384 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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