SOI TRANSISTOR HAVING EMBEDDED EXTENSION REGION, AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon-on-insulator (SOI) transistor having improved extension resistance and channel strain characteristics, and to provice a method of forming the SOI transistor.

SOLUTION: The silicon-on-insulator (SOI) transistor device includes: a buried insulator layer formed on a bulk substrate; an SOI layer formed on the buried insulator layer; and a pair of silicon containing epitaxial regions that are disposed adjacently to opposing sides of a gate conductor and correspond to source and drain regions of the transistor device, respectively. Parts of the epitaxial regions are embedded in the buried insulator and in contact with both vertical and bottom surfaces of the SOI layer corresponding to source and drain extension regions at opposing ends of a channel region of the transistor device.

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