| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems on a technique for improving the original performance of microphotofabrication using far ultraviolet light, EUV, electron beam or the like, particularly ArF excimer laser light; to provide an excellent actinic ray- or radiation-sensitive resin composition which in patterning by liquid immersion exposure as well as by normal exposure, suppresses development defects, can reduce line edge roughness, and ensures a wide exposure latitude; and to provide a pattern forming method using the same. <P>SOLUTION: The actinic ray- or radiation-sensitive resin composition comprises (A) a compound which generates an acid upon exposure with actinic rays or radiation, (B) a resin whose dissolution rate in an alkali developer increases by the action of an acid, and (C) a compound having a radical trapping group. The pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2011,JPO&INPIT |
