| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is suppressed with a decline in mechanical strength and a decline in the yield by chip cracks and has a low on-resistance and a low thermal resistance in a packaged state, and also to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes a semiconductor substrate 1, a semiconductor layer 3 formed on the principal plane of the semiconductor substrate 1, an ohmic electrode 12 formed on the backside of the semiconductor substrate 1, and a back electrode 13 that is formed on the backside of the semiconductor substrate 1 with the ohmic electrode 12 between and is formed of a metal material having a thermal conductivity higher than that of the semiconductor substrate 1. A recess 1a is formed in part of the backside of the semiconductor substrate 1. The back electrode 13 fills in the inside of the recess 1a in the backside of the semiconductor substrate 1 and covers at least part of other region than the recess 1a in the backside of the semiconductor substrate 1, via the ohmic electrode 12. COPYRIGHT: (C)2011,JPO&INPIT |
