| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method for a plasma treatment apparatus and the plasma treatment apparatus, capable of improving the production efficiency by executing simultaneous surface treatment of front and rear surfaces of a substrate to be processed. SOLUTION: In the plasma treatment apparatus, a semiconductor substrate W is separated from a stage 5 and part of the oxygen plasma to be exposed on the surface Wb of the semiconductor substrate W is made to sneak into the rear surface Wa of the semiconductor substrate W so as to expose the sneaking plasma on the rear surface Wa of the semiconductor substrate W. Then, resist films formed on the front surface Wb and the rear surface Wa of the semiconductor substrate W are subjected simultaneously to ashing processing inside the plasma. COPYRIGHT: (C)2011,JPO&INPIT
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